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IRFR3607TRPBF
Power MOSFET, N Channel, 75 V, 56 A, 9000 µohm, TO-252 (DPAK), Surface Mount
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10356 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 50+ | NT$27.240 |
| 250+ | NT$23.580 |
| 1000+ | NT$19.040 |
| 3000+ | NT$18.320 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$2,724.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFR3607TRPBF
訂購代碼2101420RL
其他名稱SP001567010
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id56A
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFR3607TRPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance and avalanche SOA. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Enhanced body diode dV/dt and di/dt capability
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
56A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
IRFR3607TRPBF 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000226