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產品訊息
製造商INFINEON
製造商產品編號IRFS3004TRL7PP
訂購代碼2725977RL
Product RangeHEXFET
其他名稱SP001557236
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id240A
Drain Source On State Resistance1250µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation380W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
Single N-channel HEXFET® power MOSFET suitable for use in high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Normal level: optimized for 10V gate drive voltage
- Industry standard surface-mount power package
- High-current carrying capability package (up to 240A, die-size dependent)
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
240A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
380W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1250µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
7Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
技術文件 (1)
IRFS3004TRL7PP 的替代選擇
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Mexico
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001