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產品訊息
製造商INFINEON
製造商產品編號IRFS4229TRLPBF
訂購代碼2803424
Product RangeHEXFET
其他名稱IRFS4229TRLPBF, SP001557392
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id45A
Drain Source On State Resistance0.048ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
HEXFET® Power MOSFET is specially designed for sustain, energy recovery and pass switch applications in plasma display panel. It features low EPULSE rating to reduce power dissipation in PDP sustain, energy recovery and pass switch applications.
- Advanced process technology
- Low QG for fast response
- High repetitive peak current capability for reliable operation
- Short fall & rise times for fast switching
- 175°C operating junction temperature for improved ruggedness
- Repetitive avalanche capability for robustness and reliability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
45A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
技術文件 (1)
IRFS4229TRLPBF 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001