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IRFS7540TRLPBF
Power MOSFET, N Channel, 60 V, 110 A, 5100 µohm, TO-263AB, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$89.610 |
| 10+ | NT$58.110 |
| 100+ | NT$40.060 |
| 500+ | NT$27.220 |
| 1000+ | NT$27.050 |
| 5000+ | NT$26.870 |
價格Each
最少: 1
多項: 1
NT$89.61
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFS7540TRLPBF
訂購代碼2406528
其他名稱SP001571690
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id110A
Drain Source On State Resistance5100µohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFS7540TRLPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, O-ring and redundant power switches, half-bridge and full-bridge topologies.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
應用
Motor Drive & Control, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
110A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00143