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IRFU3607PBF
Power MOSFET, N Channel, 75 V, 56 A, 7340 µohm, TO-251AA, Through Hole
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7,313 有存貨
6,000 即日起您可預購補貨
7313 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$29.990 |
| 10+ | NT$29.840 |
| 100+ | NT$29.680 |
| 500+ | NT$28.180 |
| 1000+ | NT$25.180 |
| 5000+ | NT$24.680 |
價格Each
最少: 1
多項: 1
NT$29.99
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFU3607PBF
訂購代碼1602237
其他名稱SP001557738
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id56A
Drain Source On State Resistance7340µohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFU3607PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance and avalanche SOA. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Enhanced body diode dV/dt and di/dt capability
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
56A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
7340µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002