列印頁面
IRG4BC30FDPBF
IGBT, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 Pins
圖片僅供舉例說明。 請參閱產品描述。
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4BC30FDPBF
訂購代碼8650381
Product RangeIRG4
其他名稱SP001545780
技術資料表
Continuous Collector Current31A
Collector Emitter Saturation Voltage1.9V
Power Dissipation100W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
MSL-
SVHCNo SVHC (17-Dec-2015)
IRG4BC30FDPBF 的替代選擇
找到 1 個產品
產品總覽
The IRG4BC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, <gt/>20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
- Optimized for specific application conditions
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
應用
HVAC, Consumer Electronics, Power Management
技術規格
Continuous Collector Current
31A
Power Dissipation
100W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
IRG4
SVHC
No SVHC (17-Dec-2015)
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
技術文件 (1)
相關產品
找到 5 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002