列印頁面
IRG4IBC30UDPBF
IGBT, 17 A, 1.95 V, 45 W, 600 V, TO-220FP, 3 Pins
圖片僅供舉例說明。 請參閱產品描述。
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4IBC30UDPBF
訂購代碼8650470
其他名稱SP001540446
技術資料表
Continuous Collector Current17A
Collector Emitter Saturation Voltage1.95V
Power Dissipation45W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220FP
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
產品總覽
The IRG4IBC30UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, <gt/>200kHz in resonant mode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes.
- HEXFRED™ anti-parallel diode minimizes switching losses and EMI
應用
Lighting, Alternative Energy, Power Management, Maintenance & Repair
技術規格
Continuous Collector Current
17A
Power Dissipation
45W
Transistor Case Style
TO-220FP
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.95V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
技術文件 (1)
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002