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IRG4PC40FDPBF
IGBT, 49 A, 1.85 V, 160 W, 600 V, TO-247AC, 3 Pins
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4PC40FDPBF
訂購代碼8650527
其他名稱SP001540552
技術資料表
Continuous Collector Current49A
Collector Emitter Saturation Voltage1.85V
Power Dissipation160W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (17-Dec-2015)
產品總覽
The IRG4PC40FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, <gt/>20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
- Optimized for specific application conditions
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
應用
Industrial, Power Management
技術規格
Continuous Collector Current
49A
Power Dissipation
160W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Collector Emitter Saturation Voltage
1.85V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
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產品合規憑證
重量 (公斤)：.00567