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IRG4PC40KDPBF
IGBT, 42 A, 2.1 V, 160 W, 600 V, TO-247AC, 3 Pins
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產品訊息
製造商INFINEON
製造商產品編號IRG4PC40KDPBF
訂購代碼8650535
其他名稱SP001533612
技術資料表
Continuous Collector Current42A
Collector Emitter Saturation Voltage2.1V
Power Dissipation160W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
IRG4PC40KDPBF 的替代選擇
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The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies <gt/>5kHz and short-circuit rated to 10μs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
應用
Alternative Energy, Power Management, Maintenance & Repair
技術規格
Continuous Collector Current
42A
Power Dissipation
160W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.00567