列印頁面
IRG4RC10SDPBF
IGBT, 14 A, 1.7 V, 38 W, 600 V, TO-252AA, 3 Pins
圖片僅供舉例說明。 請參閱產品描述。
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4RC10SDPBF
訂購代碼8659559
Product RangeIRG4
其他名稱SP001545958
技術資料表
Continuous Collector Current14A
Collector Emitter Saturation Voltage1.7V
Power Dissipation38W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-252AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product RangeIRG4
產品總覽
The IRG4RC10SDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Minimizes power dissipation at up to 3kHz PWM frequency in inverter drives, up to 4kHz in brushless DC drives. The HEXFRED™ diodes optimized for performance with IGBT. Minimized recovery characteristics require less/no snubbing.
- Tight parameter distribution
- High efficiency
- Optimized for specific application conditions
- Lower losses than MOSFET's conduction and diode losses
- 1.1V at 2A Typical extremely low voltage drop
應用
Lighting, Power Management
技術規格
Continuous Collector Current
14A
Power Dissipation
38W
Transistor Case Style
TO-252AA
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
技術文件 (1)
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000829