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IRGB4062DPBF
IGBT, 48 A, 1.65 V, 250 W, 600 V, TO-220, 3 Pins
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRGB4062DPBF
訂購代碼1298582
其他名稱SP001544880
技術資料表
Continuous Collector Current48A
Collector Emitter Saturation Voltage1.65V
Power Dissipation250W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
產品總覽
The IRGB4062DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
- Low VCE (ON) Trench IGBT technology
- Low switching losses
- Square RBSOA
- 100% of Parts tested for ILM
- Positive VCE (ON) temperature coefficient
- Ultrafast soft recovery co-pack diode
- Tight parameter distribution
- High efficiency in a wide range of applications
- Low EMI
- 5µs Short-circuit SOA
應用
Consumer Electronics, Alternative Energy, Power Management, Motor Drive & Control, Maintenance & Repair
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Continuous Collector Current
48A
Power Dissipation
250W
Transistor Case Style
TO-220
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.65V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
相關產品
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原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.00195