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IRL2505PBF
Power MOSFET, N Channel, 55 V, 104 A, 8000 µohm, TO-220AB, Through Hole
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRL2505PBF
訂購代碼8650918
其他名稱SP001567114
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id104A
Drain Source On State Resistance8000µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
IRL2505PBF 的替代選擇
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產品總覽
The IRL2505PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Logic level gate drive
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
應用
Commercial, Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
104A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
8000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
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產品合規憑證
重量 (公斤)：.004536