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IRL3803VPBF...
Power MOSFET, N Channel, 30 V, 140 A, 5500 µohm, TO-220AB, Through Hole
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產品訊息
製造商INFINEON
製造商產品編號IRL3803VPBF...
訂購代碼1013455
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id140A
Drain Source On State Resistance5500µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
產品總覽
The IRL3803VPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
應用
Commercial, Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
140A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.00186