需要更多?
| 數量 | 價格 |
|---|---|
| 1+ | NT$91.440 |
| 10+ | NT$87.520 |
| 50+ | NT$72.650 |
| 100+ | NT$57.770 |
| 250+ | NT$57.440 |
| 500+ | NT$56.790 |
| 1000+ | NT$56.460 |
| 2500+ | NT$54.170 |
產品訊息
產品總覽
The IRS2186SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Logic and power ground ±5V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current 4A/4A
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
2Channels
High Side and Low Side
8Pins
Surface Mount
4A
10V
-40°C
170ns
-
MSL 2 - 1 year
-
IGBT, MOSFET
SOIC
Non-Inverting
4A
20V
125°C
170ns
-
No SVHC (23-Jan-2024)
法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證