S29GL01GS11DHIV13

S29GL01GS11DHIV13 is a MIRRORBIT™ Eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time of as fast as 15ns with a corresponding random access time of as fast as 90ns. This feature is a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.

• 110ns random access time speed option, industrial temperature range from -40°C to +85°C
• Fortified ball-grid array (LAE064) 9 x 9mm package type
• VIO is 1.65V to VCC, VCC is 2.7V to 3.6V, highest address sector protected
• ×16 data bus, asynchronous 32byte page read
• Sector erase, uniform 128kbyte sectors
• Suspend and resume commands for program and erase operations
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Separate 1024byte one time program (OTP) array with two lockable regions
• Volatile and non-volatile protection methods for each sector
• 100000 program / erase cycles, 20 years data retention