S29GL512T11FHIV10

S29GL512T11FHIV10 is a S29GL512T MIRRORBIT™ page-mode flash memory IC fabricated on 45nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

• Single supply (VCC) for read/program/erase 2.7V to 3.6V, wide I/O voltage range (VIO): 1.65V to VCC
• ×8/×16 data bus, asynchronous 32byte page read, 512byte programming buffer
• Programming in page multiples, up to a maximum of 512 bytes
• Automatic error checking and correction ECC-internal hardware ECC with single bit error correction
• Suspend and Resume commands for program and erase operations, uniform 128KB sectors
• Status register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP), volatile and non-volatile protection methods for each sector
• Separate 2048byte one-time program (OTP) array, four lockable regions (SSR0–SSR3)
• 110 ns random access time, fortified ball-grid array package (LAA064)
• VIO=1.65 to VCC, VCC=2.7V to 3.6V, industrial –40 to 85°C temperature