S70GL02GS11FHI020

S70GL02GS11FHI020 is a S70GL02GS MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.

• CMOS 3.0V core with versatile I/O™, single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Versatile I/O feature- wide I/O voltage (VIO): 1.65V to VCC, ×16 data bus
• 16-word/32-byte page read buffer, 512byte programming buffer
• Programming in page multiples, up to a maximum of 512 bytes, uniform 128KB sectors
• Suspend and resume commands for program and erase operations
• Status Register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP), volatile and non-volatile protection methods for each sector
• Protects first or last sector, or first and last sectors of each device
• Industrial temperature range from (–40°C to +85°C)
• VIO = VCC = 2.7V to 3.6V, lowest address sector protected