S70GL02GT12FHIV10

S70GL02GT12FHIV10 is a S70GL02GT 2Gb MIRRORBIT™ flash memory device is fabricated on 45-nm MIRRORBIT™ process technology. This device offers a fast page access time of 20ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.

• CMOS 3.0V core with versatile I/O, 45nm MIRRORBIT™ process technology
• Single supply (VCC) for read/program/erase (2.7V to 3.6V), wide I/O voltage (VIO): 1.65V to VCC
• 512-byte programming buffer, programming in page multiples, up to a maximum of 512bytes
• Suspend and resume commands for program and erase operations
• Status register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP), volatile and non-volatile protection methods for each sector
• Separate 1024-byte one time program (OTP) array with two lockable regions
• Protects the last sector of the device, regardless of sector protection settings
• 100000 program-erase cycles, 20-year data retention, fortified ball grid array, 1.0mm pitch package
• 120ns speed, industrial plus (–40°C to +105°C) temperature range