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SPD04P10PLGBTMA1
Power MOSFET, P Channel, 100 V, 4.2 A, 0.85 ohm, TO-252 (DPAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$40.950 |
| 10+ | NT$25.670 |
| 100+ | NT$16.940 |
| 500+ | NT$13.200 |
| 1000+ | NT$11.060 |
| 5000+ | NT$10.840 |
價格Each
最少: 1
多項: 1
NT$40.95
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號SPD04P10PLGBTMA1
訂購代碼2212868
其他名稱SPD04P10PL G, SP000212231
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id4.2A
Drain Source On State Resistance0.85ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SPD04P10PL G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
- Enhancement-mode
- Avalanche rated
- Logic level
- Qualified according to AEC-Q101
- Green device
應用
Power Management, Automotive, Consumer Electronics, Motor Drive & Control, Portable Devices, Communications & Networking
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4.2A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.85ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0003