IXZ308N120

The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.

• High isolation voltage
• Excellent thermal transfer
• Increased temperature and power cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances offer easier to drive and faster switching
• Very low insertion inductance
• No beryllium oxide (BeO) or other hazardous materials
• Easy to mount, no insulators needed
• High power density

應用

HVAC, Power Management, Industrial