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IXZR08N120A
RF FET Transistor, 1.2 kV, 8 A, 250 W, ISOPLUS-247
不再生產
產品總覽
The IXZR08N120A is a N-channel RF Power MOSFET optimized for RF and high speed switching. The device offers isolated substrate, high isolation voltage (<gt/>2500V), excellent thermal transfer and increased temperature and power cycling capability.
- Easy to mount
- No insulators needed
- Low gate charge and capacitances
- Easier to drive
- Faster switching
- Low RDS (ON)
- Very low insertion inductance (<lt/>2nH)
應用
Industrial, RF Communications, Power Management
技術規格
Continuous Drain Current Id
8A
Operating Frequency Min
-
Transistor Case Style
ISOPLUS-247
Operating Temperature Max
175°C
Transistor Mounting
Through Hole
Power Dissipation
250W
Operating Frequency Max
-
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005