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IXFH170N10P
Power MOSFET, PolarFET, N Channel, 100 V, 170 A, 9000 µohm, TO-247, Through Hole
302 有存貨
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302 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$442.640 |
| 5+ | NT$356.980 |
| 10+ | NT$271.310 |
| 50+ | NT$266.530 |
| 100+ | NT$261.750 |
| 250+ | NT$257.990 |
價格Each
最少: 1
多項: 1
NT$442.64
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFH170N10P
訂購代碼1427292
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170A
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max5V
Power Dissipation714W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFH170N10P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for switch-mode and resonant-mode power supplies, DC-to-DC converters and laser drivers.
- International standard packages
- Avalanche rating
- Low Qg
- Low package inductance
- Easy to mount
- Space saving
應用
Power Management, Motor Drive & Control, Robotics
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
170A
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
714W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.006