列印頁面
49 有存貨
300 即日起您可預購補貨
49 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$788.050 |
| 5+ | NT$738.580 |
| 10+ | NT$689.100 |
| 50+ | NT$639.620 |
| 100+ | NT$590.140 |
| 250+ | NT$540.660 |
價格Each
最少: 1
多項: 1
NT$788.05
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFK140N30P
訂購代碼1427306
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id140A
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFK140N30P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
應用
Power Management, Motor Drive & Control
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
140A
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
1.04kW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:South Korea
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤):.01