列印頁面
IXFN180N10
MOSFET Transistor, HiPerFET, N Channel, 180 A, 100 V, 8000 µohm, 10 V, 4 V
不再生產
產品訊息
製造商產品編號IXFN180N10
訂購代碼4905672
技術資料表
Channel TypeN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds100V
Drain Source On State Resistance8000µohm
Rds(on) Test Voltage10V
Transistor Case StyleISOTOP
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation600W
Operating Temperature Max150°C
No. of Pins4Pins
Product Range-
IXFN180N10 的替代選擇
找到 1 個產品
產品總覽
The IXFN180N10 is a 100V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- miniBLOC with aluminium nitride isolation
- Low drain-to-tab capacitance
- Low inductance
- Avalanche rated
- Easy to mount
- Space-saving s
應用
Power Management, Industrial, Lighting
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
600W
No. of Pins
4Pins
Continuous Drain Current Id
180A
Drain Source On State Resistance
8000µohm
Transistor Case Style
ISOTOP
Transistor Mounting
Module
Operating Temperature Max
150°C
Product Range
-
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.042