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IXFN200N10P
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7500 µohm, 15 V, 5 V
847 有存貨
640 即日起您可預購補貨
847 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$985.400 |
| 5+ | NT$853.320 |
| 10+ | NT$721.240 |
| 50+ | NT$718.480 |
| 100+ | NT$715.710 |
價格Each
最少: 1
多項: 1
NT$985.40
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFN200N10P
訂購代碼1427322
Product RangePolar(TM) HiPerFET
技術資料表
Channel TypeN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds100V
Drain Source On State Resistance7500µohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max5V
Transistor MountingModule
Power Dissipation680W
Operating Temperature Max175°C
No. of Pins4Pins
Product RangePolar(TM) HiPerFET
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
應用
Power Management, Lighting
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
100V
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
5V
Power Dissipation
680W
No. of Pins
4Pins
MSL
-
Continuous Drain Current Id
200A
Drain Source On State Resistance
7500µohm
Rds(on) Test Voltage
15V
Transistor Mounting
Module
Operating Temperature Max
175°C
Product Range
Polar(TM) HiPerFET
SVHC
No SVHC (17-Jan-2023)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.03