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IXFN230N10
MOSFET Transistor, N Channel, 230 A, 100 V, 6000 µohm, 10 V, 4 V
不再生產
產品訊息
製造商產品編號IXFN230N10
訂購代碼3582073
技術資料表
Channel TypeN Channel
Continuous Drain Current Id230A
Drain Source Voltage Vds100V
Drain Source On State Resistance6000µohm
Rds(on) Test Voltage10V
Transistor Case StyleISOTOP
Transistor MountingModule
Gate Source Threshold Voltage Max4V
Power Dissipation700W
Operating Temperature Max150°C
No. of Pins4Pins
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
產品總覽
The IXFN230N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Avalanche rating
- Guaranteed FBSOA
- Low package inductance
- Easy to mount
- Space saving
應用
Power Management, Lighting
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation
700W
No. of Pins
4Pins
MSL
-
Continuous Drain Current Id
230A
Drain Source On State Resistance
6000µohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2020)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2020)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.046