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IXFN73N30
MOSFET Transistor, N Channel, 73 A, 300 V, 0.045 ohm, 10 V, 4 V
不再生產
產品訊息
製造商產品編號IXFN73N30
訂購代碼9359281
技術資料表
Channel TypeN Channel
Continuous Drain Current Id73A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.045ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation520W
Operating Temperature Max150°C
No. of Pins3Pins
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- JEDEC TO-264 AA, epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
應用
Power Management, Industrial, Lighting
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
300V
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4V
Power Dissipation
520W
No. of Pins
3Pins
MSL
-
Continuous Drain Current Id
73A
Drain Source On State Resistance
0.045ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.038102