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IXTH96N20P
Power MOSFET, PolarFET, N Channel, 200 V, 96 A, 0.024 ohm, TO-247, Through Hole
可供訂購
製造商標準交貨時間：29 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$346.280 |
| 5+ | NT$277.720 |
| 10+ | NT$209.160 |
| 50+ | NT$204.920 |
| 100+ | NT$200.680 |
| 250+ | NT$197.210 |
價格Each
最少: 1
多項: 1
NT$346.28
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXTH96N20P
訂購代碼1427356
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id96A
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation600W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXTH96N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
- International standard packages
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
- Avalanche rating
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
96A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
600W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.006