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IXTN210P10T
MOSFET Transistor, P Channel, 210 A, 100 V, 0.0075 ohm, 10 V, 4.5 V, SOT-227B
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326 有存貨
60 即日起您可預購補貨
326 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,804.380 |
| 5+ | NT$1,637.200 |
| 10+ | NT$1,470.020 |
| 50+ | NT$1,378.960 |
價格Each
最少: 1
多項: 1
NT$1,804.38
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXTN210P10T
訂購代碼3438414
Product RangeTrenchP
技術資料表
Channel TypeP Channel
Continuous Drain Current Id210A
Drain Source Voltage Vds100V
Drain Source On State Resistance7500µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation830W
Operating Temperature Max150°C
Product RangeTrenchP
SVHCNo SVHC (12-Jan-2017)
產品總覽
IXTN210P10T is a TrenchP™ power MOSFET. Suitable for high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators and battery charger applications.
- P-channel enhancement mode
- Avalanche rated and fast intrinsic rectifier
- International standard package
- Low intrinsic gate resistance
- miniBLOC with aluminium nitride isolation
- Extended FBSOA and low RDS(ON) and QG
- Easy to mount, space savings and high power density
- 210A continuous drain current Id
- 100V drain source voltage Vds, 10V Rds(on) test voltage, 4.5V max gate source threshold voltage
- 0.0075ohm drain source on state resistance
技術規格
Channel Type
P Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Power Dissipation
830W
Product Range
TrenchP
Continuous Drain Current Id
210A
Drain Source On State Resistance
7500µohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (12-Jan-2017)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.459035