IXDI609SITR

IXDI609SITR is a 9-ampere low-side ultrafast MOSFET high-speed gate driver. It is especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609 high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns. The input is CMOS compatible, and is virtually immune to latch-up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the ideal for high-frequency and high-power applications. Application includes efficient power MOSFET and IGBT switching, switch mode power supplies, motor controls, DC to DC converters, class-D switching amplifiers, pulse transformer driver.

• 8-pin power SOIC with exposed metal back case material
• Wide operating voltage range from 4.5V to 35V
• Operating temperature range from -40°C to +125°C
• Logic input withstands negative swing of up to 5V
• Matched rise and fall times, low propagation delay time
• Low 10µA supply current, low output impedance
• Configured as an inverting driver