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IXTA08N100D2HV
Power MOSFET, N Channel, 1 kV, 800 mA, 21 ohm, TO-263HV, Surface Mount
200 有存貨
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200 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$178.860 |
| 10+ | NT$110.200 |
| 100+ | NT$95.490 |
| 500+ | NT$83.060 |
| 1000+ | NT$79.780 |
價格Each
最少: 1
多項: 1
NT$178.86
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXTA08N100D2HV
訂購代碼3930413
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id800mA
Drain Source On State Resistance21ohm
Transistor Case StyleTO-263HV
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
High voltage depletion mode power MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators and active loads applications.
- High voltage package
- Normally on mode
- International standard package
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
技術規格
Channel Type
N Channel
Continuous Drain Current Id
800mA
Transistor Case Style
TO-263HV
Rds(on) Test Voltage
0V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
21ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.30935