MSC025SMB120B4N

MSC025SMB120B4N is a 1200V, 25mohm silicon carbide (SiC) power MOSFET in a 4-lead TO-247 package. It delivers high efficiency with low switching and conduction losses, fast switching speed, and robust avalanche performance. Designed for high-power and high-temperature applications, it is ideal for use in EV chargers, solar inverters, motor drives, and industrial power supplies.

• Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
• Supports high-frequency operation for smaller magnetics, higher power density, and lower cost
• Superior avalanche ruggedness and short-circuit withstand time
• HV-H3TRB proven capability ensures long-term reliability in high humidity environments
• Lower VGS and standard package enables improved compatibility with standard gate drivers
• Increased creepage distance (notch) improves safety and reliability in high-voltage designs