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TC6320TG-G
Dual MOSFET, Complementary N and P Channel, 200 V, 200 V, 7 ohm
2,264 有存貨
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2264 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$58.050 |
| 25+ | NT$48.110 |
| 100+ | NT$43.620 |
| 3300+ | NT$42.750 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$58.05
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商MICROCHIP
製造商產品編號TC6320TG-G
訂購代碼3491060
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel200V
Drain Source Voltage Vds P Channel200V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel7ohm
Drain Source On State Resistance P Channel7ohm
Transistor Case StyleNSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
200V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
7ohm
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 3 - 168 hours
Drain Source Voltage Vds N Channel
200V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
7ohm
Transistor Case Style
NSOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000113