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| 數量 | 價格 |
|---|---|
| 1+ | NT$450.430 |
| 10+ | NT$418.560 |
| 25+ | NT$410.120 |
價格Each
最少: 1
多項: 1
NT$450.43
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產品訊息
製造商MICRON
製造商產品編號MT47H128M16RT-25E AIT:C
訂購代碼4050860
技術資料表
DRAM TypeDDR2
Memory Density2Gbit
Memory Configuration128M x 16bit
Clock Frequency Max400MHz
IC Case / PackageFBGA
No. of Pins84Pins
Supply Voltage Nom1.8V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
產品總覽
MT47H128M16RT-25E AIT:C is an DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the DDR2 SDRAM effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and four corresponding n-bitwide, one-half-clock-cycle data transfers at the I/O balls.
- Operating voltage range is 1.0V to 2.3V (VSS)
- 128Meg x 16 configuration, AEC-Q100- qualified
- Packaging style is 84-ball 9mm x 12.5mm FBGA
- Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
- Posted CAS additive latency (AL)
- Data rate is 800MT/s, differential data strobe (DQS, DQS#) option
- DLL to align DQ and DQS transitions with CK, duplicate output strobe (RDQS) option for x8
- Programmable CAS latency (CL)
- On-die termination (ODT), supports JEDEC clock jitter specification
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), 8D response time
技術規格
DRAM Type
DDR2
Memory Configuration
128M x 16bit
IC Case / Package
FBGA
Supply Voltage Nom
1.8V
Operating Temperature Min
-40°C
Product Range
-
Memory Density
2Gbit
Clock Frequency Max
400MHz
No. of Pins
84Pins
IC Mounting
Surface Mount
Operating Temperature Max
95°C
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Taiwan
承擔產品生產最後程序之國家
關稅編號:85423239
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.002679