MT53E1G64D4HJ-046 WT:C

MT53E1G64D4HJ-046 WT:C is a 16Gb mobile low-powerDDR4 SDRAM with lowVDDQ. It is a high-speed, CMOS dynamic random-access memory device. This memory is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks. It has programmable VSS (ODT) termination and single-ended CK and DQS support. This memory has directed per-bank refresh for concurrent bank operation and ease of command scheduling.

• Operating voltage is 1.10V (VDD2) 0.60V or 1.10V (VDDQ)
• 1Gig x 64 configuration, LPDDR4, 4die addressing
• Packaging style is 556-ball TFBGA 12.4 x 12.4 x 1.1mm (Ø0.24 SMD)
• Cycle time is 468ps at RL = 36/40
• Operating temperature range is –25°C to +85°C, C design
• Clock rate is 2133MHz, data rate per pin is 4266Mb/s
• Ultra-low-voltage core and I/O power supplies
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)