MPQ1923GRE-AEC1-P

MPQ1923 is an AEC-Q100 qualified, 100V, 8A, high-frequency, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are controlled independently, and are matched with <lt/>5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET undervoltage lockout (UVLO) protection forces the outputs low. The MPQ1923 also features an integrated bootstrap (BST) diode to reduce the external component count. Applications include motor drivers, telecom half-bridge power supplies, avionics DC/DC converters, two-switch forward converters and active-clamp forward converters.

• Drives an N-channel MOSFET half-bridge
• Low dropout with 4.5V undervoltage lockout (UVLO) falling threshold
• 120V bootstrap voltage (VBST) range, on-chip bootstrap diode
• 20ns typical propagation delay, 8A sink current, 7A source current at 12V VDD
• <lt/>5ns gate driver matching time delay
• Drives a 1nF load with 7.2ns rise time (tRISE) and 5.5ns fall time (tFALL) at 12V VDD
• TTL-compatible input, <lt/>300µA quiescent current (IQ)
• UVLO protection for the HS-FET and LS-FET gate drivers
• Available in QFN-10 package

附註

MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.