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BSS192,115
Power MOSFET, P Channel, 240 V, 200 mA, 12 ohm, SOT-89, Surface Mount
12,659 有存貨
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12659 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 50+ | NT$21.270 |
| 200+ | NT$14.220 |
| 500+ | NT$10.900 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$2,127.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號BSS192,115
訂購代碼1758088RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds240V
Continuous Drain Current Id200mA
Drain Source On State Resistance12ohm
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS192,115 is a P-channel enhancement-mode vertical double-diffused FET in a medium power and flat lead surface-mount plastic package. The DMOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications.
- Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
- Very fast switching
- No secondary breakdown
- -55 to 150°C Junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-89
Rds(on) Test Voltage
10V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
240V
Drain Source On State Resistance
12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
BSS192,115 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Hong Kong
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Hong Kong
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000109