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BSS84,215
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount
產品訊息
製造商NEXPERIA
製造商產品編號BSS84,215
訂購代碼1510765
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id130mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS84,215 is a -50V P-channel enhancement mode Field Effect Transistor designed and qualified for use in computing, communications, consumer and industrial applications. This DMOS (Diffusion Metal-Oxide Semiconductor) transistor is suitable for high frequency applications due to fast switching characteristics.
- Suitable for use with all 5V logic families
- Suitable for low gate drive sources
- Low threshold voltage
- High speed switching
- Direct interface to CMOS and Transistor-Transistor Logic (TTL)
- No secondary breakdown
- ±20V Gate to source voltage
應用
Power Management, Industrial, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
130mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
BSS84,215 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.00001