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產品訊息
製造商NEXPERIA
製造商產品編號NXV55UNR
訂購代碼3617842
Product RangeTrench
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.9A
Drain Source On State Resistance0.066ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation340mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrench
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
NXV55UNR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Low threshold voltage, very fast switching
- Drain-source voltage is 30V max at Tj = 25°C
- Gate-source voltage is 8V maximum
- Drain current is 2.3A max at VGS = 4.5V; Tamb = 25°C; t ≤ 5s
- Peak drain current is 7.6A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Total power dissipation is 340mW max at Tamb = 25°C
- Drain-source on-state resistance is 50mohm typ at VGS = 4.5V; ID = 1.9A; Tj = 25°C
- Source-drain voltage is 0.6V typ at IS = 0.4A; VGS = 0V; Tj = 25°C
- Total gate charge is 5.8nC typ at VDS = 15V; ID = 1.9A; VGS = 4.5V; Tj = 25°C
- Ambient temperature range from -55 to 150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.9A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
340mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
Trench
SVHC
No SVHC (25-Jun-2025)
NXV55UNR 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001361