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NGB15T65M3DFPJ
IGBT, 33 A, 1.53 V, 127 W, 650 V, TO-263AB (D2PAK), 3 Pins
800 有存貨
需要更多？
800 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$36.100 |
| 500+ | NT$31.670 |
| 1000+ | NT$29.510 |
| 5000+ | NT$27.980 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$3,610.00
品項附註
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產品訊息
產品總覽
NGB15T65M3DFPJ is a 650V, 15A trench field-stop IGBT with full rated silicon diode in a 3 pin D2PAK package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 15 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
技術規格
SVHC
Lead (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001