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NGW30T60M3DFQ
IGBT, 75 A, 1.4 V, 285 W, 600 V, TO-247, 3 Pins
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39 有存貨
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2 件可于 1-2 個工作日後配送(新加坡 件庫存)
37 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$205.340 |
| 10+ | NT$136.060 |
| 100+ | NT$133.340 |
| 500+ | NT$130.620 |
| 1000+ | NT$127.900 |
價格Each
最少: 1
多項: 1
NT$205.34
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號NGW30T60M3DFQ
訂購代碼4241552
Product RangeField Stop Trench Series
技術資料表
Continuous Collector Current75A
Collector Emitter Saturation Voltage1.4V
Power Dissipation285W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product RangeField Stop Trench Series
SVHCNo SVHC (27-Jun-2024)
NGW30T60M3DFQ 的替代選擇
找到 1 個產品
產品總覽
NGW30T60M3DFQ is a 600V, 30A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5μs. This hard-switching 600V, 30A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and soft fast reverse recovery diode
技術規格
Continuous Collector Current
75A
Power Dissipation
285W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
Field Stop Trench Series
Collector Emitter Saturation Voltage
1.4V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (27-Jun-2024)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.001