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NGW40T65H3DHPQ
IGBT, 72 A, 1.69 V, 275 W, 650 V, TO-247, 3 Pins
430 有存貨
需要更多？
430 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$116.720 |
| 500+ | NT$114.340 |
| 1000+ | NT$111.960 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$11,672.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
產品總覽
NGW40T65H3DHPQ is a 650V, 40A trench field-stop IGBT with half rated silicon in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650V, 40A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
- IGBT collector current is rated at 40A, diode forward current is rated at 20A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
技術規格
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001