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PMDPB55XP,115
Dual MOSFET, P Channel, 20 V, 20 V, 4.5 A, 4.5 A
4,053 有存貨
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3000 件可于 1-2 個工作日後配送(新加坡 件庫存)
1053 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$40.560 |
| 10+ | NT$19.050 |
| 100+ | NT$16.190 |
| 500+ | NT$15.870 |
| 1000+ | NT$15.550 |
| 5000+ | NT$15.220 |
價格Each
最少: 5
多項: 5
NT$202.80
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PMDPB55XP,115
訂購代碼2191806
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOT-1118
No. of Pins8Pins
Power Dissipation N Channel490mW
Power Dissipation P Channel490mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The PMDPB55XP is a dual P-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
- Very fast switching characteristics
- Exposed drain pad for excellent thermal conduction
應用
Industrial, Power Management, Motor Drive & Control, Portable Devices
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
490mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOT-1118
Power Dissipation N Channel
490mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000454