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PMZB290UNE2YL
Power MOSFET, N Channel, 20 V, 1.2 A, 0.27 ohm, SOT-883B, Surface Mount
可供訂購
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| 數量 | 價格 |
|---|---|
| 5+ | NT$13.250 |
| 50+ | NT$6.800 |
| 250+ | NT$5.130 |
| 1000+ | NT$4.370 |
| 5000+ | NT$2.660 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$66.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PMZB290UNE2YL
訂購代碼2498600
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.2A
Drain Source On State Resistance0.27ohm
Transistor Case StyleSOT-883B
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The PMZB290UNE2 is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Low threshold voltage
- Very fast switching
- <gt/>2kV HBM ESD protection
- Ultra-thin package profile of 0.37mm
- -55 to 150°C Junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.2A
Transistor Case Style
SOT-883B
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00082