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PSMN013-40VLDX
Dual MOSFET, N Channel, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
產品訊息
製造商NEXPERIA
製造商產品編號PSMN013-40VLDX
訂購代碼3677640RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id42A
Continuous Drain Current Id N Channel42A
On Resistance Rds(on)0.01135ohm
Continuous Drain Current Id P Channel42A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0136ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleLFPAK56D
Gate Source Threshold Voltage Max1.85V
No. of Pins8Pins
Power Dissipation Pd46W
Power Dissipation N Channel46W
Power Dissipation P Channel46W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCLead (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
42A
Continuous Drain Current Id P Channel
42A
Drain Source On State Resistance N Channel
0.0136ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.85V
Power Dissipation Pd
46W
Power Dissipation P Channel
46W
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
42A
On Resistance Rds(on)
0.01135ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
LFPAK56D
No. of Pins
8Pins
Power Dissipation N Channel
46W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536