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PSMN029-100HLX
Dual MOSFET, N Channel, 100 V, 100 V, 30 A, 30 A, 0.029 ohm
產品訊息
製造商NEXPERIA
製造商產品編號PSMN029-100HLX
訂購代碼4078665RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel100V
On Resistance Rds(on)0.0251ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.029ohm
Rds(on) Test Voltage5V
Drain Source On State Resistance P Channel-
Transistor Case StyleLFPAK56D
Gate Source Threshold Voltage Max2.1V
No. of Pins8Pins
Power Dissipation Pd68W
Power Dissipation N Channel68W
Power Dissipation P Channel68W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCLead (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0251ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
0.029ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.1V
Power Dissipation Pd
68W
Power Dissipation P Channel
68W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Transistor Case Style
LFPAK56D
No. of Pins
8Pins
Power Dissipation N Channel
68W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000272