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PSMN8R7-80BS,118
Power MOSFET, N Channel, 80 V, 90 A, 7500 µohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$69.870 |
| 10+ | NT$59.590 |
| 100+ | NT$45.220 |
| 500+ | NT$29.840 |
| 1000+ | NT$29.250 |
| 5000+ | NT$28.650 |
價格Each
最少: 1
多項: 1
NT$69.87
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PSMN8R7-80BS,118
訂購代碼2112547
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id90A
Drain Source On State Resistance7500µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The PSMN8R7-80BS is a N-channel MOSFET suitable for standard level gate drive sources. It is designed and qualified for use in a wide range of load switching, server power supplies, DC-to-DC converters and domestic equipment applications.
- High efficiency due to low switching and conduction losses
- -55 to 175°C Junction temperature range
應用
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
7500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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重量 (公斤)：.001384