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BFG591
Bipolar - RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT-223
不再生產
產品訊息
製造商NXP
製造商產品編號BFG591
訂購代碼1081291
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Power Dissipation2W
Continuous Collector Current200mA
Transistor Case StyleSOT-223
No. of Pins3Pins
DC Current Gain hFE Min90hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
BFG591 的替代選擇
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產品總覽
The BFG591 is a NPN silicon planar epitaxial Wideband Transistor features high power gain and low noise figure. Intended for applications in the GHz range such as MATV or CATV amplifiers.
- High transition frequency
- Gold metallization ensures excellent reliability
應用
RF Communications
技術規格
Transistor Polarity
NPN
Power Dissipation
2W
Transistor Case Style
SOT-223
DC Current Gain hFE Min
90hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
15V
Continuous Collector Current
200mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Netherlands
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Netherlands
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.000264