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不再生產
產品訊息
製造商NXP
製造商產品編號BFU590GX
訂購代碼2776268
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max12V
Transition Frequency8.5GHz
Power Dissipation2W
Continuous Collector Current200mA
Transistor Case StyleSOT-223
No. of Pins4Pins
DC Current Gain hFE Min60hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2024)
產品總覽
BFU590GX is a NPN wideband silicon RF transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2GHz. Typical applications include automotive applications, broadband amplifiers, medium power amplifiers (500mW at a frequency of 433MHz or 866MHz) and large signal amplifiers for ISM applications.
- 24V collector-base voltage, 12V collector-emitter voltage, 2V emitter-base voltage
- Medium power, high linearity, high breakdown voltage RF transistor
- 95 typical DC gain
- Maximum stable gain is 13dB at 900MHz
- AEC-Q101 qualified
- Output power at 1dB gain compression PL(1dB) is 21.5dBm at 900MHz
- 8.5GHz transition frequency
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Transistor Polarity
NPN
Transition Frequency
8.5GHz
Continuous Collector Current
200mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
12V
Power Dissipation
2W
Transistor Case Style
SOT-223
DC Current Gain hFE Min
60hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000148