MRFE6VP61K25HR6

MRFE6VP61K25HR6 is a wideband RF power LDMOS transistor in a 4 pin NI-1230 package. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analogue and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used single ended or in a push pull configuration
• Qualified up to a maximum of 50VDD operation
• Characterized from 30V to 50V for extended power range
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage for improved class C operation
• Characterized with series equivalent large signal impedance parameters